Mechanical properties, stress relaxation and high temperature thermal stability of nanolayered Mo-Si-N/SiC thin films
Mictostructure, thermal stability, nanoindentation mechanical properties, and stress relaxation of nanolayered Mo-Si-N/SiC thin films have been studied. Multilayers of Mo-Si-N(MoSi(2.2)N(2.5)) and SiC were deposited by magnetron sputtering from planar MoSi(2) and SiC targets on to single crystal silicon wafers. The relative amount of both components was varied while keeping bilayer thickness constant, or the bilayer thickness was varied with constant Mo-Si-N to SiC ratio.
Bibliographic Reference: Article: Journal of Materials Research (1998)
Record Number: 199811394 / Last updated on: 1998-11-10
Original language: en
Available languages: en