Fundamentals in Ion Assisted Deposition of Thin Films
General introduction to ion-solid interaction is presented. The concepts of nuclear and electronic stopping, irradiation damage, displacement cascade and thermal spikes are developed and applied to the study of a growing film under ion-bombardment. Discussion of the results published in literature is made and it is shown that the formation and distribution of point defects during film growth is responsible for film properties such as density, stress, texture and equilibrium phases.
Bibliographic Reference: Paper presented: MICHROTHERM 1998, Institute of Electronics, Technical University of Lodz (PL), September 24-26th, 1998
Availability: Available from DG XIII D-2 as Paper EN 41805 ORA
Record Number: 199910202 / Last updated on: 1999-03-12
Original language: en
Available languages: en