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In-situ XRD stress determinations have been performed during pure ion oxidation, po(2)=2x10(-3) Pa, T=800 degrees Celsius). The compressive stress, initially present in blank substrates, due to surface preparation, is completely released above 400 degrees Celsius. If the in-situ compressive stress level determined in FeO scales is not strongly dependent upon yttrium implantation, the residual stresses are different after cooling to room temperature, Blank specimens show residual compressive stress, implanted samples show residual tensile stress. The presence of yttrium at the internal interface induces a different way of thermal stress relaxation in the scale. Our results also indicate that a way to lower compressive growth stresses can be the use of yttrium implantation.

Additional information

Authors: BUSCAIL H, LVEEM, le Puy-en-Velay (FR);CAUDRON E, LVEEM, le Puy-en-Velay (FR);RABASTE F, LVEEM, le Puy-en-Velay (FR);JACOB Y P, JRC IAM-Cyclotron, Ispra (IT);STROOSNIJDER M F, JRC IAM-Cyclotron, Ispra (IT)
Bibliographic Reference: Paper presented: The Fifth International Conference on Ultra-High Purity Metallic Base Materials
Availability: Available from DG XIII D-2 as Paper EN 41784 ORA
Record Number: 199910208 / Last updated on: 1999-03-12
Original language: en
Available languages: en