Synthesis and properties of carbon nitride films deposited using a dual ion beam method
Carbon-nitride films were synthesized by dual ion beam deposition. It has been found that the film growth occurs only if the ion-atom arrival ratio I/A is smaller than a critical value indicating chemical spluttering. Experimental evidence was obtained by monitoring the gas evolved during deposition with a quadrupole gas analyzer. The maximum value of nitrogen content measured by AES was about 35%. FT-IR spectroscopy was used to investigate the chemical bonding structure. Hardness measurements with values up to 20 Gpa were recorded using a depth sensing nanoindenter.
Bibliographic Reference: Article: Vuoto, Vop, XXVI, Number One - Gennaio-Marzo,1997, pp 38-41
Record Number: 199910241 / Last updated on: 1999-03-12
Original language: en
Available languages: en