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Thin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD reactor from tetra zircon precursor diluted in Ar and O(2) gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating charateristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed

Additional information

Authors: CECCONE G, Institute for Advanced Materials, ispra (IT);ROSSI F, Institute for Advanced Materials, ispra (IT);COLPO P, Institute for Advanced Materials, ispra (IT);SALVATORE P, Institute for Advanced Materials, ispra (IT);LECLERQ B, Institute for Advanced Materials, ispra (IT)
Bibliographic Reference: Paper presented: Materials Research Society Meeting (MRS), Boston (US), 30 November 4th December, 1998
Availability: Available from DG XIII as Paper EN 41953 ORA
Record Number: 199910322 / Last updated on: 1999-03-12
Original language: en
Available languages: en
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