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Abstract

The combination of chemical vapour deposition (CVD) and diffusion has shown that it is possible to enrich electrical sheet steel with silicon (Si), to increase content to over 6%. The results indicate that a series of CVD apparatus with increasing partial pressures of the Si carrying gas in the vapour phase would be a much more efficient method for Si enrichment, however, the long diffusion time involved present problems for industrialization of the process.

Additional information

Authors: AREZZO F, Centro Sviluppo Materiali SpA, Rome (IT)
Bibliographic Reference: EUR 18561 EN (1998 50pp.
Availability: Available from OOPEC Sales agents
ISBN: ISBN 92-828-4903-1
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