Diffusion mechanism of silicon (up to 6.5 WT%) deposited from vapour phase on electrical steel sheetsFunded under: FP4-BRITE/EURAM 3
The combination of chemical vapour deposition (CVD) and diffusion has shown that it is possible to enrich electrical sheet steel with silicon (Si), to increase content to over 6%. The results indicate that a series of CVD apparatus with increasing partial pressures of the Si carrying gas in the vapour phase would be a much more efficient method for Si enrichment, however, the long diffusion time involved present problems for industrialization of the process.
Bibliographic Reference: EUR 18561 EN (1998 50pp.
Availability: Available from OOPEC Sales agents
ISBN: ISBN 92-828-4903-1
Record Number: 199910339 / Last updated on: 1999-03-12
Original language: en
Available languages: en