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Abstract

The metal-support interaction between rhodium and silica has been studied by x-ray photoelectron spectroscopy for a Rh/SiO2/Mo model system. This system consists of a thin silicon oxide layer, prepared by chemical vapour deposition on molybdenum with a nominal load of one monolayer rhoduim. Heating in ultrahigh vacuum (UHV) results in changes of the cluster size and binding energies of surface species. Thermal treatments above 850 K in UHV results in the formation of a rhodium silicide, Rh3Si, which has not been reported so far. For the formation of this new phase a surface reaction mechanism is proposed.

Additional information

Authors: LABICH S, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);KOHL A, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);TAGLAUER E, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE);KNOZINGER H, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE)
Bibliographic Reference: Article: Journal of Chemical Physics, 109(1998)6, 2052-2055
Record Number: 199910500 / Last updated on: 1999-03-26
Category: PUBLICATION
Original language: en
Available languages: en