Silicide Formation by High-temperature Reaction of Rh with model SiO(2) Films
The metal-support interaction between rhodium and silica has been studied by x-ray photoelectron spectroscopy for a Rh/SiO2/Mo model system. This system consists of a thin silicon oxide layer, prepared by chemical vapour deposition on molybdenum with a nominal load of one monolayer rhoduim. Heating in ultrahigh vacuum (UHV) results in changes of the cluster size and binding energies of surface species. Thermal treatments above 850 K in UHV results in the formation of a rhodium silicide, Rh3Si, which has not been reported so far. For the formation of this new phase a surface reaction mechanism is proposed.
Bibliographic Reference: Article: Journal of Chemical Physics, 109(1998)6, 2052-2055
Record Number: 199910500 / Last updated on: 1999-03-26
Original language: en
Available languages: en