Diffusion mechanism of silicon deposited from vapour phase on electrical steel sheets
This research investigated methods of increasing the silicon content of electrical sheet steels by subjecting them to high temperatures over varying lengths of time, using CVD deposition and diffusion techniques. In one experiment, samples were treated at 900ºC for 3 minutes and then kept under annealing conditions for 4 minutes, a procedure which was maintained for a total of 4 hours. This resulted in an increase in silicon content, from 1.0% in the original sample, to 6.0% after treatment. When CVD diffusion was maintained at 1100ºC for 1 hour, the silicon content increased to approximately 3.5%, a level comparable with the silicon levels in high quality commercial steels. The researchers have concluded that although this technique represents an efficient method of increasing the silicon content of electrical sheet steels, the long diffusion period which the process requires may restrict its industrial applications.
Bibliographic Reference: EUR 18561 EN (1998)
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Record Number: 199910503 / Last updated on: 1999-03-26
Original language: en
Available languages: en