Co-deposition of deuterium with silicon doped carbon
The co-deposition of deuterium with silicon doped carbon for silicon concentrations between 0-100 at.% in the temperature range from room temperature to 1000K has been investigated. The eroded material from various different targets was caught on collectors together with the reflected D to build up the co-deposited layers, which were analysed with MeV ion beam techniques. The amount of trapped D per re-deposited target atom depends weakly on the Si concentration . The maximum of about 0.7d/(Si+C) was found at Si/C=1. For pure C and pure Si the D concentration is about 0.45 and 0.5 D atoms per re-deposited target atom at room temperature, respectively. For increasing deposition temperature the D concentration does not decrease significantly until about 600K. At about 1000K the D concentration for pure carbon layers is still about 30% of the concentration at room temperature. Also, co-depositeed layers of stainless steel and of titanium-carbon mixtures were investigated.
Bibliographic Reference: Article: Journal of Nuclear Materials, 266-269 (1999) 440-445
Record Number: 199910719 / Last updated on: 1999-05-14
Original language: en
Available languages: en