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Third harmonic generation efficiency is shown to be greatly enhanced at the onset of inelastic scattering of electrons on optic phonons. Scaling experiments are performed on n-type InP at the pump wave frequency of 9.43 GHz at 80K. Monte Carlo modelling is employed for scaling the effect to the 3rd harmonic frequency of 1 THz. The THG efficiency in n-type GaAs and InP as well as in the wurtzite phase of n-type InN and GaN compound crystals is compared to that in n-type Si. The efficiency maximum is found to weaken due to the quasi-elastic scattering on acoustic phonons and elastic scattering on ionized impurities. Nevertheless, the THG efficiency at 1 THz in InP crystals cooled down to a liquid nitrogen temperatures is predicted to be 2 orders of magnitude higher than the reference value of 0.1% experimentally recorded upto now in type Si.

Additional information

Authors: RAGOUTIS R, Semiconductor Physics Institute, Vilinius (LT);MOREAU P, CEA Cadarache (FR);SIEGRIST M R, JET-EFDA, Culham Science Centre, Abingdon (GB);BRAZIS, Semiconductor Physics Institute, Vilinius (LT)
Bibliographic Reference: Article: International Journal of Infrared and Millimeter Waves (1999)
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