Direct identification of the synergism between methyl radicals and atomic hydrogen during growth of amorphous hydrogenated carbon films
The simulataneous interaction of methyl radicals (CH3) and atomic hydrogen (H) with the surface of amorphous hydrogenated carbon (a-C:H) film is investigated. Two identical quantified beam sources for H and CH(3) are used. The growth and/or erosion during the cimultaneous interaction of the two beams with an amorphous hydrogenated carbon film is monitored by using in situ real-time ellipsometry at a substrate temperature of 320 K. Interaction with the CH(3) beam alone causes slow growth, corresponding to a sticking coefficient for CH(3) of ~3X10(-3), which is two orders of magnitude larger than for CH(3) alone. From a microscopic modelling of this synergistic growth, the reaction probability for CH(3) adsorbing at an adsorption site, which is created by atomic hydrogen at the surface, is derived to be 0.14.
Bibliographic Reference: Article: Applied Physics Letters, Vol. 76 (2000) No. 6, pp. 676-678
Availability: Applied Physics Letters (Journal)
Record Number: 200012065 / Last updated on: 2000-06-21
Original language: en
Available languages: en