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Abstract

The investigated devices consist of InGaAs/InAlAs multilayer films grown by molecular beam epitaxy on InP. Results from two samples with the same epitaxial layer composition but with different layer thicknesses are presented. Of the three techniques investigated, Rutherford backscattering spectrometry (RBS), variable angle spectroscopic ellipsometry (VASE) and secondary ion mass spectrometry (SIMS), VASE appears to be the choice for routine work. Both RBS and SIMS are shown to be valuable complementary techniques.

Additional information

Authors: PERSSON L, EC-JRC Institute for Reference Materials and Measurements (IRMM), Geel (BE);WTJEN U, EC-JRC Institute for Reference Materials and Measurements (IRMM), Geel (BE);LÍVESTAM N G, Chalmers University of Technology, G÷teborg (SE);LIVESTAM N G, Chalmers University of Technology, G?teborg (SE);SÍDERVALL U,
Bibliographic Reference: Article: Nuclear Instruments and Methods in Physics Research 161-163 (2000) pp. 482-486
Availability: Nuclear Instruments and Methods in Physics Research (Journal)
Record Number: 200012257 / Last updated on: 2000-08-10
Category: PUBLICATION
Original language: en
Available languages: en
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