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Abstract

Two CdTe solar cells with very different IV-characteristics are analyzed using impedance spectroscopy and capacitance voltage measurements at different temperatures and under dark conditions. The two samples are distinguished by a different duration of the NP etching process applied before back contact deposition. The cell with a short etching time (30 secs) shows a strong roll over in the forward bias region, and the cell with the surface that was etched over for the longer time (3 min) showed a very strong decrease of the roll over and a better fill factor. The results show that the etching process changes dramatically the CV characteristics, the resulting CdTe effective doping concentration and that this change can be correlated to different equivalent circuits obtained by the fitting of the impedance spectra of the two samples.

Additional information

Authors: DUNLOP E D, European Commission, Joint Research Centre, Environment Institute, EC-DG JRC, ESTI, Ispra (IT);EBNER B, European Commission, Joint Research Centre, Environment Institute, EC-DG JRC, ESTI, Ispra (IT);FRIESEN G, External PhD student of the University of Konstanz (DE);WENDT R, Antec GmbH, Kelkheim (DE)
Bibliographic Reference: Paper presented: E-MRS Spring Conference 2000, Strasburg (FR) 6 June 2000
Availability: Available from European Commission, Joint Research Centre, Ispra (IT)
Record Number: 200012279 / Last updated on: 2000-08-10
Category: PUBLICATION
Original language: en
Available languages: en
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