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The composition of co-deposited carbon-silicon layers (a-C:Si:D) with varying Si concentrations and their removal by heating in air were investigated using MeV ion beam techniques. The ion-induced release of D due to the analysing beam (1.2 MeV 3He) was determined. The removal rates of D and C by heating in air increase strongly at temperatures around 550 K for a-C:D layers. With increasing Si content, these temperatures rise to above 650 K for layers with Si concentrations larger than 0.2 Si/(Si + C). The C removal rate is always lower than the D removal rate. Si is not removed by this method. The observed properties of the layers are compared with those of hard and soft a-C:D films.

Additional information

Authors: BALDEN M, Max-Plank-Institut fur Plasmaphysik,EURATOM-Association, Boltzmannstrasse 2, D-85748 Garching (DE);MAYER M, Institut fur Plasmaphysik, Forschungszentrum Julich GmbH, EURATOM-Association, Trilateral Euregio Cluster, D-52425 Julich (DE)
Bibliographic Reference: Article: Journal of Nuclear Materials, 283-287 (2000), pp. 1057-1061
Record Number: 200013115 / Last updated on: 2001-02-20
Original language: en
Available languages: en