Simultaneous interaction of methyl radicals and atomic hydrogen with amorphous hydrogenated carbon films
The simultaneous interaction of methyl radicals (CH) and atomic hydrogen (H) with the surface of amorphous hydrogenated carbon (a-C:H) films is investigated by using quantified radical beam sources. The growth and/or erosion of the films during the interaction of the H and CH radical beam with the surface is monitored by means of in situ real-time ellipsometry at a substrate temperature of 320 K. Interaction with the CH beam alone results in a slow growth rate corresponding to a sticking coefficient for CH of ~10[-4]. Simultaneous interaction of an atomic hydrogen beam and the CH radical beam with the surface results in a sticking coefficient for CH of ~10[-2]. A microscopic modelling of this synergistic growth yields a cross section of 3.8 A for CH adsorption at a dangling bond, created by abstraction of surface bonded hydrogen due to impinging atomic hydrogen. The cross section for the abstraction of surface bonded hydrogen by impinging CH radicals is 1.5x 10[-3] A.
Bibliographic Reference: Article published in: Journal of Applied Physics vol. 89. No.5, (2001) pp. 2979-2986
Record Number: 200013285 / Last updated on: 2001-05-16
Original language: en
Available languages: en