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Abstract

The simultaneous interaction of methyl radicals (CH[3]) and atomic hydrogen (H) with the surface of amorphous hydrogenated carbon (a-C:H) films is investigated by using quantified radical beam sources. The growth and/or erosion of the films during the interaction of the H and CH[3] radical beam with the surface is monitored by means of in situ real-time ellipsometry at a substrate temperature of 320 K. Interaction with the CH[3] beam alone results in a slow growth rate corresponding to a sticking coefficient for CH[3] of ~10[-4]. Simultaneous interaction of an atomic hydrogen beam and the CH[3] radical beam with the surface results in a sticking coefficient for CH[3] of ~10[-2]. A microscopic modelling of this synergistic growth yields a cross section of 3.8 A[2] for CH[3] adsorption at a dangling bond, created by abstraction of surface bonded hydrogen due to impinging atomic hydrogen. The cross section for the abstraction of surface bonded hydrogen by impinging CH[3] radicals is 1.5x 10[-3] A[2].

Additional information

Authors: JACOB W, Max-Planck Institut fur Plasmaphysik, EURATOM Association, Garching (DE);SCHWARZ-SELINGER T, Max-Planck Institut fur Plasmaphysik, EURATOM Association, Garching (DE);VON KEUDELL A, Max-Planck Institut fur Plasmaphysik, EURATOM Association, Garching (DE)
Bibliographic Reference: Article published in: Journal of Applied Physics vol. 89. No.5, (2001) pp. 2979-2986
Record Number: 200013285 / Last updated on: 2001-05-16
Category: PUBLICATION
Original language: en
Available languages: en