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In this paper we report on the carbonisation of thin Ti films on graphite (Ti/C) and carbon films on Ti substrates (C/Ti) due to bombardment with noble gas ions (Ar{+} and He{+}) at room temperature. The chemical state of the film is investigated by X-ray photoelectron spectroscopy (XPS). Directly after evaporation of the Ti (and C films respectively) on the substrates about one monolayer of TiC is detected. Subsequent ion bombardment can lead to a complete conversion of elementary carbon into carbide. Spectra recorded during Ar{+} and He{+} depth profiling of Ti/C films with ion energies in the range between 0.5 and 4 keV clearly show the existence of TiC at the interface. The total amount of TiC formed increases with ion energy with ion energy indicating a more effective ion beam mixing at higher energies. At 4 keV Ar{+} ion energy all Ti at the interface is detected as carbide resulting in a composition of stoichiometric TiC. The C/Ti samples show in addition to TiC a distribution of titanium sub-carbides.

Additional information

Authors: LUTHIN J ET AL, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE)
Bibliographic Reference: An article published in: Nuclear Instruments and Methods in Physic Research B, Vol.182 (2001), pp.218-226
Record Number: 200113879 / Last updated on: 2001-10-09
Original language: en
Available languages: en