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One of the major differences between traditional crystalline-Si modules and newer technologies, such as CdTe and multiple junction devices, is the variation of fill factor with irradiance. This work aims to investigate these discrepancies and to model the fill factor behaviour using analytical models. The analysis will incorporate series and shunt resistance behaviour over a range of illumination methods to explain fill factor losses.

Additional information

Authors: ANDERSON D ET AL, JRC, Institute for Environment and Sustainability, Renewable Energies Unit, Ispra (IT)
Bibliographic Reference: An oral report given at: The 17th European Photovoltaic Solar Energy Conference and Exhibition. Held in: Munich (DE), 22-26 October 2001
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