Artifacts in the measurement of effective diffusion lengths in CdTe solar cells
Minority carrier diffusion length of the base is one of the most important parameters that influence the performance of p-n junction diodes and solar cells. Various methods exist for determining such parameters, and involve various tradeoffs between accuracy and convenience. Great discrepancy for the measurement of this parameter is reported in literature in the case of multi crystalline CdS/CdTe solar cells, ranging over almost two decades of magnitude. This paper provides an insight in the artefacts that give rise to such a large spread of measured values, and reviews the most commonly used methods for the calculation of diffusion lengths from the measurement of the short circuit current as a function of the wavelength of incident light. Effective diffusion lengths of the order of 0.5 to 0.8 micro-m, in differently processed CdTe solar cells, are found.
Bibliographic Reference: An oral report given at: The 17th European Photovoltaic Solar Energy Conference and Exhibition. Held in: Munich (DE), 22-26 October 2001
Record Number: 200114092 / Last updated on: 2001-11-23
Original language: en
Available languages: en