Coherent precipitate formation and diffusion effects in Ge-implanted TiO2-single crystals
The group IVA element Ge was implanted into TiO2-single crystals (rutile) with fluences of 5×10(15) and 3×10(15) ions/square cm 16° off and parallel to the (001) crystal axis, respectively. The production of damage and its recovery, ion distribution and lattice site location were studied as a function of the annealing temperature, using Rutherford backscattering and Channeling (RBS-C). Coherent precipitate formation was observed after implantation at room temperature (RT). During annealing the precipitates are stable until 800 K and decompose at 900 K. The Ge atoms then started to diffuse and moved to Ti-lattice sites.
Bibliographic Reference: An article published in: Nuclear Instruments and Methods in Physics Research B, Vol. 178 (1-4), (2001) pp. 97-100
Record Number: 200214504 / Last updated on: 2002-04-03
Original language: en
Available languages: en