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Abstract

The group IVA element Ge was implanted into TiO2-single crystals (rutile) with fluences of 5×10(15) and 3×10(15) ions/square cm 16° off and parallel to the (001) crystal axis, respectively. The production of damage and its recovery, ion distribution and lattice site location were studied as a function of the annealing temperature, using Rutherford backscattering and Channeling (RBS-C). Coherent precipitate formation was observed after implantation at room temperature (RT). During annealing the precipitates are stable until 800 K and decompose at 900 K. The Ge atoms then started to diffuse and moved to Ti-lattice sites.

Additional information

Authors: FROMKNECHT R, Forschungszentrum Karlsruhe, Institut fur Nukleare Festkorperphysik, Karlsruhe (DE);LINKER G, Forschungszentrum Karlsruhe, Institut fur Nukleare Festkorperphysik, Karlsruhe (DE);MEYER G, Forschungszentrum Karlsruhe, Institut fur Nukleare Festkorperphysik, Karlsruhe (DE);KHUBEIS I, Faculty of Applied Science, Al-Balqa Applied University, Al-Salt (JO);WISS T, European Commission, Joint Research Centre, Institute of Transuranium Elements, Karlsruhe (DE)
Bibliographic Reference: An article published in: Nuclear Instruments and Methods in Physics Research B, Vol. 178 (1-4), (2001) pp. 97-100
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