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Abstract

The temperature dependence of the interaction of methyl radicals with the surface of a hard, amorphous hydrogenated carbon film is investigated using in situ real-time ellipsometry and infrared spectroscopy. This interaction is considered as an important process during plasma deposition of polymer-like hydrocarbon films or formation of polycrystalline diamond in methane-containing discharges. At room temperature CH3 adsorbs at sp(2)-coordinated CC bonds at the physical surface of the hard C:H film and forms a completely sp(3)-hybridized C:H adsorbate with a thickness of ~0.17 nm. In the following, steady-state film growth is observed with a sticking coefficient of s(CH3) = 10(-4). At a substrate temperature of T = 570 K, incident CH3 causes net erosion with an etching yield of Y(CH3) = 10(-4). At temperatures above 650 K the sticking coefficient of CH3 becomes positive again, leading to a graphite-like C:H adsorbate. CH3 adsorption is described by a reaction scheme based on the creation of dangling bonds at the film surface via abstraction of surface-bonded hydrogen by incoming CH3 radicals. These dangling bonds act as CH3 adsorption sites at room temperature or as a precursor for chemical erosion at elevated temperature.

Additional information

Authors: MEIER M, Centre for Interdisciplinary Plasma Science, Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (DE);VON KEUDELL A, Centre for Interdisciplinary Plasma Science, Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (DE)
Bibliographic Reference: An article published in: Journal of Chemical Physics - March 22, 2002 - Volume 116, Issue 12, pp. 5125-5136
Record Number: 200214634 / Last updated on: 2002-04-19
Category: PUBLICATION
Original language: en
Available languages: en
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