Certification of antimony implanted in a silicon wafer with a silicon dioxide diffusion barrier. IRMM-302. BAM-L001
This report describes the certification of the reference material antimony implanted in Si/SiO(2) intended to be used for calibration of surface and near surface analytical methods. It describes the preparation, homogeneity measurements and the analytical work performed for the certification of both the area density of antimony atoms (retained dose) and the isotope amount ratio as well as giving considerations on the stability of the material.
Bibliographic Reference: EUR 20125 EN (2001), pp.29. Free of charge
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Record Number: 200315716 / Last updated on: 2003-01-10
Original language: en
Available languages: en