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Abstract

The influence of hydrogen ion bombardment on plasma deposition of amorphous hydrogenated carbon films is investigated in a particle beam experiment employing sources for methyl radicals as carbon carrying precursor, for atomic hydrogen, and for low energy ions. Elementary plasma-surface processes such as ion-induced formation of surface dangling bonds (dbs) and ion-induced formation of molecules in the subsurface region are studied. It is shown that the absolute growth rate can be dominated by the flux of atomic hydrogen towards the growing film surface since the ion-induced formation of surface dbs may be largely compensated by hydrogen addition. The film properties are dominated by subsurface hydrogen depletion caused by the ion bombardment.

Additional information

Authors: HOPF C, Centre for Interdisciplinary Plasma Science, Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (DE);VON KEUDELL A, Centre for Interdisciplinary Plasma Science, Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (DE);JACOB W, Centre for Interdisciplinary Plasma Science, Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching (DE)
Bibliographic Reference: An article published in: Diamond and Related Materials, Volume 12, Issue 2, February 2003, Pages 85-89
Availability: This article can be accessed online by subscribers, and can be ordered online by non-subscribers, at: http://dx.doi.org/10.1016/S0925-9635%2803%2900007-4
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