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Abstract

Aluminum oxide (Al(2)O(3)) films were deposited by the filtered vacuum arc method, using a highly pure aluminum cathode and oxygen gas. Substrate temperature as high as 780 Degree Celsius was necessary for the formation of corundum structured alpha-Al(2)O(3). Applying RF power and thus negative bias voltage to the substrate enables to increase and control the energy of substrate bombarding ions. With a negative bias voltage of 200 V, it was possible to deposit films containing alpha-Al(2)O(3) with pre-heating the substrate to a temperature lower than 500 Degree Celsius. Increasing the voltage, thus increasing the ion energy, resulted in lowering of the critical pre-heating substrate temperature for formation of alpha-phase. Additionally, there was a clear difference in crystal orientation of alpha-Al(2)O(3) between the films grown with and without substrate bias voltage, which was confirmed by infrared spectroscopy. Structure and phase evolution of the film were also studied by cross-sectional transmission electron microscopy.

Additional information

Authors: YAMADA-TAKAMURA Y, Department of Metallurgy and Materials Science, The University of Tokyo, Tokyo (JP);KOCH F, Max-Planck-Institut für Plasmaphysik, IPP-EURATOM Association, Garching (DE);MAIER H, Max-Planck-Institut für Plasmaphysik, IPP-EURATOM Association, Garching (DE);BOLT H, Max-Planck-Institut für Plasmaphysik, IPP-EURATOM Association, Garching (DE)
Bibliographic Reference: An article published in: Surface and Coatings Technology, Volumes 142-144, pp. 260-264 (2001)
Availability: This article can be accessed online by subscribers, and can be ordered online by non-subscribers, at: http://dx.doi.org/doi:10.1016/S0257-8972(01)01206-3
Record Number: 200719175 / Last updated on: 2007-05-21
Category: PUBLICATION
Original language: en
Available languages: en