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Thermal reaction of SiC films with Mo, Re and Mo-Re alloy

Funded under: FP7-EURATOM

Abstract

Solid-state reactions between SiC films and pure Mo or Re metal substrates on thermal annealing between 1373 and 1873 K for various durations have been investigated. The behaviour of Mo-47.5Re/SiC couple was also examined to establish the effect of the mix on stability. SiC coatings were deposited on metallic wires by hot filament rapid chemical vapour deposition from a gas mixture of tetramethylsilane (TMS) and hydrogen at 1373 K under normal pressure. The interface zones were characterized using optical microscopy, X-ray diffraction, and electron probe microanalysis. All analyses reveal that SiC reacts with substrates. The formation of a rhenium silicide was established on pure Re whereas a carbide and a silicon carbide containing molybdenum were formed on pure Mo. The diffusion kinetics were established from the thicknesses of reaction zones as a function of annealing durations. The outstanding fact of this work was the higher degree of reactivity observed on Mo-47.5Re alloy in comparison with pure Mo or Re as if there is a synergic effect. The apparent activation energy determined on pure Mo, pure Re and Mo-47.5Re substrates are equal to 64, 99 and 74 kcal mol{-1}, respectively.

Additional information

Authors: ROGER J, Université Bordeaux 1, Laboratoire des Composites Thermostructuraux, Pessac (FR);LE PETITCORPS Y, Université Bordeaux 1, Laboratoire des Composites Thermostructuraux, Pessac (FR);AUDUBERT F, Département de Recherches sur la Fusion Contrôlée, Association Euratom-CEA sur la Fusion, CEA Cadarache, Saint-Paul-lez-Durance (FR)
Bibliographic Reference: An article published in: Journal of Alloys and Compounds, Volume 475, Issues 1-2, 2009, pp. 635-642
Availability: This article can be accessed online by subscribers, and can be ordered online by non-subscribers, at: http://dx.doi.org/doi:10.1016/j.jallcom.2008.07.141
Record Number: 200910349 / Last updated on: 2009-09-22
Category: PUBLICATION
Original language: en
Available languages: en
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