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In this study, we examined the effect induced by the addition of a TiC interlayer on the stability of the Mo/SiC system at high temperature. Indeed, Mo/SiC couple is unstable at high temperature with formation of Mo(2)C and Mo(5)Si(3)C(x) phases. In order to limit the degradation of Mo mechanical properties, a TiC film was inserted between Mo and SiC. Samples used in this work were prepared on metallic wires substrates, SiC and TiC being deposited by CVD. The protection given by TiC layer was considered in the 1473-1673 K temperature range and for TiC thicknesses up to about 60 mu m. From our results, TiC is not effective enough to mitigate C and Si atoms diffusion. Nevertheless, a notable reduction of the reaction extent is obtained at any temperatures. The so-observed effect depends on the TiC thickness and the temperature. In actual fact, TiC efficiency increases when temperature and/or TiC layer thickness increases without reaching a complete protection.

Additional information

Authors: ROGER J, Université Bordeaux 1, Pessac (FR);LE PETITCORPS Y, Université Bordeaux 1, Pessac (FR);AUDUBERT F, Département de Recherches sur la Fusion Contrôlée, Association Euratom-CEA sur la Fusion, CEA Cadarache, Saint-Paul-lez-Durance (FR)
Bibliographic Reference: An article published in: Journal of Alloys and Compounds, Article in Press, December 2009
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