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Ig-QPD Report Summary

Project ID: 648855
Funded under: H2020-EU.1.1.

Periodic Reporting for period 1 - Ig-QPD (Ion-gated Interfaces for Quantum Phase Devices)

Reporting period: 2015-06-01 to 2016-11-30

Summary of the context and overall objectives of the project

Superconductors, entangled photons, ferromagnetism… They are all quantum states with great potential to enrich the functionality of electronic devices. One simple example is to fabricate a superconducting circuitry, without any energy loss or heat production. Or sending information through entangled photons. But making such devices requires transistors to control these quantum states. The key purpose of the project is to realize the control of quantum phase in the electronic devices. The method used is to build those devices using ion-gated ‘liquid’ transistors, which make technical possibility to reach the capacitance needed to induce quantum phase such as superconductors. And it also allows us to mix different properties of quantum phase such as using a magnetic ionic liquid we can control ferromagnetism and superconductivity.

Work performed from the beginning of the project to the end of the period covered by the report and main results achieved so far

In this ERC consolidate grant, the group of PI has worked on a broad range of 2D materials including layered superconductor, graphene, and transition metal dichalcogenides. The project has obtained the following recent highlights in 2D materials regarding the gate control of quantum states 1) discovery of metallic ground state in ZrNCl (Science 350, 409 (2015)) 2) and discovery of Ising pairing in MoS2 (Science 350, 1353 (2015)). Besides published result, the project has also obtained the following result to be reported. 1) CVD growth of large area monolayer transition metal dichalcogenide and realizing 1) strong Ising superconductivity and related electronic phases 2) electrically controlled quantum light emitter, and 3) formation of pn junction for electrically driven strong light emission and lasing in monolayer transition metal dichalcogenides.

Progress beyond the state of the art and expected potential impact (including the socio-economic impact and the wider societal implications of the project so far)

Up to the moment of reporting this ERC consolidate grant, the group of PI has achieved 1) making quantum phase device and realizing field defect control which was published in the aforementioned top scientific journal and being reported in several media. The outcome has the following impact to the society
– New science and technology As one of the ultimate goal to study the quantum phase phenomena, active researches will be focused to bridge the gap between materials, quantum phases and working devices with electrical functionalities.
The outcomes of these scientific advances have the potential of creating the foundation for a whole range of novel device applications that will be of benefit to society at large. 

– Media interest Discovery of new quantum phenomena at electronic interfaces has the potential of becoming a ‘hot topic’ that could attract lot of scientific and social attention. 

– Training of new scientist and initiating new group The funding will initiate a new group and support the scientific activities of one PhD and one Postdoc directly. The present members, two postdoc and two PhD students, will also benefit from instruments and facilities from VIDI grant. This project will be an important support to the training and growth of all these young scientists for their future careers. 

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