Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS

FP5

EURONIM Informe resumido

Project ID: G5RD-CT-2001-00470
Financiado con arreglo a: FP5-GROWTH
País: France

Free-standing GaN

Thick GaN layer were grown by HVPE on ELO quality GaN/sapphire. Afterwards the starting sapphire was separated either by laser lift off or by a CNRS proprietary technology. These free- standing GaN exhibit TDs in the mid 106cm{-2} and therefore are suitable for the growth of laser diode structures.

The process still needs to improved (reduction of the pits density, of the bow, of the warp, polishing).

Información relacionada

Contacto

Pierre GIBART
Tel.: +33-4-93001598
Fax: +33-4-93652815
Correo electrónico
Síganos en: RSS Facebook Twitter YouTube Gestionado por la Oficina de Publicaciones de la UE Arriba