Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS

FP5

EURONIM Informe resumido

Project ID: G5RD-CT-2001-00470
Financiado con arreglo a: FP5-GROWTH
País: France

Low dislocation density GaN/sapphire template (NID, n-type and semi-insulating), TDs~upper107cm{-2}

Low dislocation density GaN/sapphire templates with TDs density in the upper 107cm{-2} have been obtained improving the proprietary Si/N treatment of the sapphire substrate prior to the deposition of the low temperature buffer layer. These are pseudosubstrates to be used for the growth of nitride based device structure, like UV LEDs or FETs. These templates are also used as pseudosubstrates in MBE. One of our customers, Sharp UK, demonstrated the first MQWs GaInN/GaN laser diodes grown by MBE on Lumilog’s GaN/sapphire templates.

Contacto

Pierre GIBART
Tel.: +33-4-93001598
Fax: +33-4-93652815
Correo electrónico
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