Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS

FP5

DEW Informe resumido

Project ID: IST-1999-29012
Financiado con arreglo a: FP5-IST
País: Germany

Epitaxial growth by MBE of III/V heterostructures particularly GaSb/AlSb/InAs

MBE growth, including optimisation for lattice mismatched growth, optimised growth temperatures and beam equivalent pressures.

Enabling future projects using these materials.

High-speed applications such as fundamental physics including ballistic transport, as well as opto-electronic applications like lasers and detectors for 1,55µm.

Reported by

Technische Universitaet Darmstadt
Hochschulstrasse 4A
64289 DARMSTADT
Germany
See on map
Síganos en: RSS Facebook Twitter YouTube Gestionado por la Oficina de Publicaciones de la UE Arriba