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Ballistic Double Electron Waveguide for Potential Use in Analog-to-digital conversion.

Exploitable results

One-dimensional InAs based DEW devices were fabricated using optical, electron beam lithography and various dry and wet etching techniques. Such one-dimensional devices can be used as a building block of double-electron wave-guides, which can be of potential application in the development of analogue to digital converters. These devices are also of potential interest in the newly emerging field of spintronics.
A number of Micro-Electro-Mechanical Systems (MEMS) were developed for frequencies above 100MHz up to THz, and infrared optics. They are generally based on membranes of GaAs and GaN where locally the substrate was removed. The membranes include epitaxially grown hetero-structures including quantum-physical effects. Applications are bolometric sensors, high-Q filters and impedance matching circuits, tuneable resonators, THz mixers and many more.
Development of the design rules for DEW structure optimisation, theoretical evaluation of the operation limits of DEW devices on the basis of GaAs, InAs and InSb heterostructure systems including high-frequency performance. Utility: Enabling future projects on nanoscale electronic devices Potential applications: Optimisation procedure for the ballistic quantum devices on any material systems, for instance carbon nanotubes.
Design, fabrication and testing of the measurement set-up for on-wafer HF characterization of electronic devices within 20K-300K temperature range, including a vacuum set-up with low-vibration interface and a computer-controlled positioning system for the co-planar HF probes. Applicable immediately to any research projects about electronic device application, potentially of value over many years. Electrical characterization of other electronic devices, like GaN-based HEMTs, surface channel FETs on diamond and diamond-based MEMS structures.
Reducing interfaces roughness is essential to improve the device characteristic, especially for nanometer structures where quantum effects occur. Special attention has to be paid if both group III and group V elements have to be changed. Enabling future projects using these materials High-speed applications such as HEMTs and fundamental physics including ballistic and/or spin transport, as well as opto-electronic applications like lasers and detectors for 1,55µm.
A theoretical study of the ballistic conductance in electron wave-guides created by deep mesa etching from quantum-well structures for three different cases: continuous-gate, top-gate and side-gate. The continuous-gate device provides a periodic quantized conductance output and can be of potential use as a discrete device in high-speed analogue to digital conversion.
A study of the ballistic conductance of electron wave-guides created by lateral depletion of the two-dimensional electron gas caused by negatively biased split surface Schottky gates. These results can be used as guidelines for the fabrication of practical electron wave-guides. This result was published in the Journal of Applied Physics Vol. 93 page 5422 (2003).
MBE growth, including optimisation for lattice mismatched growth, optimised growth temperatures and beam equivalent pressures. Enabling future projects using these materials. High-speed applications such as fundamental physics including ballistic transport, as well as opto-electronic applications like lasers and detectors for 1,55µm.
Structure characterization with TEM, XRD and time resolved RHEED, in connection with Hall measurements give the knowledge to improve the epitaxial growth. These techniques will be of use in future projects using these materials. They can also be used in semiconductor process control applications.

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