Service Communautaire d'Information sur la Recherche et le Développement - CORDIS


SPINOSA Résumé de rapport

Project ID: IST-2001-33334
Financé au titre de: FP5-IST
Pays: Germany

Tunnelling anisotropic magneto-resistance, new magneto-resistance in a ferromagnet/oxide/non-magnet layer stack

In a stack of a ferromagnetic semiconductor, a tunnel barrier, and a non-magnetic metal, a strong tunnelling magneto-resistance can occur. The resistance is due to the change in the density of states in the ferromagnet with changing of the direction of the magnetization with respect to the lattice. In a layers stack with two ferromagnetic layers the effect can be strongly enhanced.

-C. Gould, C. Ruster, T. Jungwirth, E. Girgis, G.M. Schott, R. Giraud, K. Brunner, G. Schmidt and L.W. Molenkamp
Tunnelling Anisotropic Magneto-resistance: A spin-valve like tunnel magneto-resistance using a single magnetic layer
Phys. Rev. Lett. 93, 117203 (2004)
-C. Ruster, C. Gould, T. Jungwirth, J. Sinova, G. M. Schott, R. Giraud, K. Brunner, G. Schmidt, and L.W. Molenkamp
Very large Tunnelling Anisotropic Magneto-resistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack
Phys. Rev. Lett. In press

Informations connexes

Reported by

Universitaet Wuerzburg
Am Hubland
97074 Wuerzburg
See on map