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FLASIC Résumé de rapport

Project ID: G5RD-CT-2002-00704
Financé au titre de: FP5-GROWTH
Pays: France

Flat epitaxial 3C SiC/Si(100) layers by checkerboard carbonisation

The problems arising from the epitaxial growth of 3C SiC layers on Si substrates are due to the mismatch in lattice parameter and coefficient of thermal expansion between these two materials. This results in strained and poor crystalline quality layers. For device applications, the 3C SiC layer is used. The strain of the layer must be controlled to avoid a bow larger than a few tens of micrometers in order to enter the photolithography technological step of the devices production.

It was investigated and then patented a process to reach this flatness. It consists of a checkerboard of compressive areas between tensile ones. This results in a balanced strain and a negligible bow. The crystalline quality of the compressive and tensile areas is better than the one that can be also obtained with a controlled carbonisation leading also to a very low bow. The size of the areas can be adapted to the device size

Informations connexes


Andre LEYCURAS, (Researcher)
Tél.: +33-4-93954202
Fax: +33-4-93958361