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ILO Informe resumido

Project ID: IST-2001-33057
Financiado con arreglo a: FP5-IST
País: Germany

Organic light-emitting field-effect transistors

Organic light-emitting field-effect transistor

Organic light-emitting field-effect transistors have been demonstrated for the first time. The devices were fabricated by vacuum deposition of tetracene on Si/SiO2 substrates with pre-structured gold source and drain electrodes. Despite the fact that gold electrodes should only form good hole injecting contacts with tetracene, electron injection occurred. The existence of electrons and holes in the transistor channel was proven first by the existence of light emission and second by the typical tetracene electroluminescence spectrum measured during operation of the transistor. The emission was observed close to the drain contact.

Despite that, ambipolar behaviour was not observed for these devices, which therefore has to be attributed to a significantly lower electron mobility, especially since electron and hole injection barriers were found to be comparable by UPS studies. In order to attain similar electron and hole mobilities interface doping (electrochemical doping in this case) was performed. Ambipolar operation and luminescence at voltages below 10V could be attained.

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Contacto

Heinz VON SEGGERN, (Group leader)
Tel.: +49-615-1166301
Fax: +49-615-1166305
Correo electrónico
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