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TECH-TIR Résumé de rapport

Project ID: G1ST-CT-2001-50128
Financé au titre de: FP5-GROWTH
Pays: Italy

High-end infrared motion detectors

The development of a TE sensor in CMOS technology allows the possibility to integrate, on the same sensor's chip, also the main parts of the electronics necessary to realize an IR motion detector. Using the traditional pyroelectric (PIR) sensor, largely applied on the traditional motion detectors, such a possibility doesn't exist, and the related electronics is necessarily made through external discrete components usually mounted on a printed circuit board.

The CMOS TE technology would then enclose inside the same chip and sensor housing most of the electronic circuits needed to achieve the motion detection function: amplifiers, choppers, filters, etc.
Only few and "bulky" components, like the alarm relay and the electrolytic capacitors, might be discrete and mounted outside on the printed circuit board (p.c.b.).

An IR motion detector realized on such a way would give a certain number of advantages in comparison with the traditional PIR detectors as follows:
- Much smaller dimensions of the p.c.b., and then smaller size of the overall detector
- Lower energy consumption due to the full CMOS electronics
- Higher electromagnetic immunity due to the on-chip integration of the electronics housed inside the same shielding metallic case of the TE sensor
- Higher detection capability due to the wider bandwidth of the TE sensor


The building block for the motion detector were developed and manufactured. The lab-scale post-processing had provided a yield of 95%. Nevertheless the current design was very sensitive to manufacturing yield. For that reason an off-the shelf pyro-sensor was demonstrated

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