Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS


QUDOS Informe resumido

Project ID: IST-2001-32358
Financiado con arreglo a: FP5-IST
País: Germany

Si/SiGe ITD layer

Si/SiGe quantum well based interband tunnelling diodes exhibiting high peak to valley current ratios (up to 5.6) have been realized using solid source molecular beam epitaxy (MBE) [1]. We report also the first room temperature demonstration of negative differential resistance in diodes incorporating self-assembled Ge quantum dots [2]. In that case, a detailed structural optimisation leads to peak to valley current ratios between 2 and 3 [3].

M. Stoffel, G. S. Kar, S. Kiravittaya, O. G. Schmidt, J. Appl. Phys. , submitted (2004)

M. W. Dashiell, C. Müller, N. Y. Jin-Phillip, U. Denker, O. G. Schmidt, K. Eberl, Mat. Sci. Eng. B 89, 106 (2002)

M. Stoffel, G. S. Kar, O. G. Schmidt, Mat. Sci. Eng. C, submitted (2004).


Oliver SCHMIDT, (Head MBE lab)
Tel.: +49-711-6891312
Fax: +49-711-6891010
Correo electrónico
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