Wspólnotowy Serwis Informacyjny Badan i Rozwoju - CORDIS

FP5

QUDOS Streszczenie raportu

Project ID: IST-2001-32358
Źródło dofinansowania: FP5-IST
Kraj: United Kingdom

NDR characteristics of Si/SiGe RTD on Si

Negative differential resistance has been obtained from a number of devices from a Daimler Chrysler resonant tunnelling diode wafer at 77 K. A peak current density of 14.9 A/cm² with a peak-to-valley current ratio of 2.1 achieved.

Work is still progressing to try to improve on the performance of the RTDs.

- P. See and D.J. Paul, “The scaled performance of Si/Si1-xGex resonant tunnelling diodes” IEEE Elec. Dev. Lett. 22, 582 (2001).

- D.J. Paul et al., Si/SiGe electron resonant tunnelling diodes Appl. Phys. Lett. 77, 1653 (2000).

Reported by

THE UNIVERSITY OF CAMBRIDGE
Cavendish Laboratory Madingley Road
CB3 0HE CAMBRIDGE
United Kingdom
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