Wspólnotowy Serwis Informacyjny Badan i Rozwoju - CORDIS

FP5

QUDOS Streszczenie raportu

Project ID: IST-2001-32358
Źródło dofinansowania: FP5-IST
Kraj: United Kingdom

Co-integration concept

A report has been distributed to the partners detailing different integration schemes between Si-based tunnel diodes and Si transistors. The QUDOS partners will be attempting to fabricate an inverted strained-Si MODFET with an integrated Si/SiGe RTD produced with a single epitaxial growth. The best performing system for most tunnel diode circuits is the strained-Si CMOS technology with integrated RTDs.

Reported by

THE UNIVERSITY OF CAMBRIDGE
Cavendish Laboratories
CB3 0HE CAMBRIDGE
United Kingdom
Śledź nas na: RSS Facebook Twitter YouTube Zarządzany przez Urząd Publikacji UE W górę