Servizio Comunitario di Informazione in materia di Ricerca e Sviluppo - CORDIS

FP5

QUDOS Sintesi della relazione

Project ID: IST-2001-32358
Finanziato nell'ambito di: FP5-IST
Paese: Germany

Manufacturability

The manufacturability of the Si/SiGe ITD has been studied intensively. For the diodes with 5um2 device area the standard deviation of the peak current was about 16 %. The homogeneity of the peak voltage depends on the homogeneity of the epitaxial growth. In this case even a one-nanometer difference in the layer thickness plays a critical role. For the presented structure a standard deviation of the peak voltage was about 15%. For the PVCR a standard deviation of 4% and 8% was obtained. The ITD fulfils all requirements except the reproducibility of the peak current density.

Contatto

Werner PROST
Tel.: +49-203-3794607
Fax: +49-203-3793400
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