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Project ID: IST-2001-32358
Finanziato nell'ambito di: FP5-IST
Paese: Germany

III/V high-speed latch on Si

A monolithically integrated MOBILE circuit with a pin-diode at the input and an output amplifier based on HFETs was designed. Functionality of the designed circuit was demonstrated using InP-based devices. InGaAs/InAlAs resonant-tunnelling diodes and Metal-Shottky-Metal diodes were successfully realized on Silicon substrate. Full realisation of the MOBILE using III/V-on-Si could not be achieved within the limits of this project because of the conductive layer at the interface between the Si substrate and the InP buffer parallel to the HFET channel.

Reported by

Universität Duisburg-Essen
Lotharstr. 55
47057 Duisburg
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