Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS

FP5

NANOMASS II Informe resumido

Project ID: IST-2001-33068
Financiado con arreglo a: FP5-IST
País: Denmark

CMOS post-processing for nanofabrication

Cantilever resonators have been monolithically integrated on standard twin well 2-poly-silicon 2-metal CMOS chips using the developed post-process sequence. This enables us to fabricate and integrate mechanical structures having nanometer dimensions with standard microelectronics for possible biosensor applications. Furthermore, the process steps allows for low cost mass fabrication of compact “intelligent” nanosystems. Possible application areas lie within areas such as health care, environmental monitoring and electronic engineering (RF MEMS applications).

Process:
After CMOS fabrication, local openings are created in the top passivation layer, exposing the top poly-silicon layer of the CMOS. This poly-silicon layer is etched away and the bottom poly-silicon layer, which is used as the structural layer, is exposed. An Al pattern is defined on the poly-silicon using a combination of low energy electron beam lithography and direct write laser lithography. The Al is used as an etch mask for anisotropic reactive ion etching of the structural poly-silicon layer. HF etching of the underlying SiO2 layer releases the cantilever structures. A supportive photoresist coating is applied to circumvent stiction of the fabricated structures. The cantilever structures are dry-released by removing the photoresist using oxygen plasma ashing.

Información relacionada

Reported by

MIKROELEKTRONIK CENTRET
TECHNICAL UNIVERSITY OF DENMARK, BUILDING 345 EAST
2800 Lyngby
Denmark
See on map
Síganos en: RSS Facebook Twitter YouTube Gestionado por la Oficina de Publicaciones de la UE Arriba