Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS

FP5

NANOMASS II Informe resumido

Project ID: IST-2001-33068
Financiado con arreglo a: FP5-IST
País: Denmark

Direct write laser lithography

A CMOS compatible direct write laser lithography (DWL) technique has been developed for monolithic cantilever fabrication on CMOS substrates. DWL enables fast and flexible prototyping of sub-micrometer structures over cm2 areas.

The technique is based on direct laser writing on substrates coated with a resist bi-layer consisting of poly(methyl methacrylate) (PMMA) on ZEP-resist. Laser writing evaporates the PMMA exposing the ZEP. A resist solvent is used to transfer the pattern down to the substrate. Metal lift-off is used for creating an Al mask for post-process reactive ion etching. %
The developed laser lithography technique is compatible with resist exposure techniques such as electron beam lithography (EBL) and can also be combined with atomic force microscopy (AFM) based lithography. Hence delicate structures having nanometer dimensions can be defined by EBL or AFM, which can be connected to the macroscopic world by laser lithography. This could also reduce the fabrication costs in the production of CMOS integrated nano structures.

Reported by

MIKROELEKTRONIK CENTRET
TECHNICAL UNIVERSITY OF DENMARK, BUILDING 345 EAST
2800 Lyngby
Denmark
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