Forschungs- & Entwicklungsinformationsdienst der Gemeinschaft - CORDIS


NANOMAT Berichtzusammenfassung

Project ID: G5RD-CT-2001-00545
Gefördert unter: FP5-GROWTH
Land: Belgium

Development of experimental and theoretical tools for the determination of the role of phonons in stacked layers of quantum dots

Nature of the result:
The result involves the development of a methodology for the calculation of phonon modes and the exciton-phonon interaction in stacked self-assembled quantum dots (SAQDs). A theoretical approach, based on the multimode dielectric continuum model for phonons in confined systems, is extended to calculate phonon modes and the exciton-phonon interaction in stacked layers of SAQDs.

The optical-absorption and luminescence spectra of InAs stacked SAQDs are analysed within the framework of the non-adiabatic theory of phonon-assisted optical transitions in quantum dots. In addition, Raman spectroscopy and photoluminescence measurements on local phonon modes in stacked SAQDs enable an insight in exciton-phonon interaction and the influence of stacking on the local phonon properties.

Potential applications of the result:
The result can be used for the characterization of stacked SAQDs and other semiconductor nanostructures using experimental data on optical-absorption, luminescence and Raman spectra.

End-users of the result:
The end users of this result are all those involved in the research and development of semiconductor nanostructures, including members of the project consortium and the wider scientific community.

Main innovative features/benefits:
The optical-phonon spectra in stacked quantum dots acquire a more complicated structure than those in a single quantum dot. In particular, in a stack of N quantum dots each interface-phonon frequency of a single quantum dot splits into N branches due to the electrostatic interaction between the optical polar vibrations of different quantum dots. The result offers the possibility for an advanced understanding of the vibrational spectra and optical properties of self-assembled semiconductor nanostructures.

Analysis of market or application sectors:
The result is a principally scientific one, so such an analysis is not applicable.

Potential barriers:
There are no barriers to the use of this result.

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