Forschungs- & Entwicklungsinformationsdienst der Gemeinschaft - CORDIS


SOLSIC Berichtzusammenfassung

Project ID: G5RD-CT-2001-00563
Gefördert unter: FP5-GROWTH
Land: United Kingdom

Development of reaction bonding process for high purity self bonded silicon carbide

The work carried out during the course of the project has advanced the overall purity of the reaction bonding technique by an order of magnitude. Improvement in purity was directly important to the project itself, but also has wider implications for the production and subsequent use of SiC. The traditional processing technique needed sintering aids; impurities which helps the material to react and form a dense body. In a range of high performance engineering applications, and also in electrical/electronic applications the addition of certain types of impurity can be problematic, so as well as producing an overall higher purity material, the technology developed through the course of the project has permitted a broader range of additives to be used, which may not be as efficient as traditional sintering aids, but avoid introducing types of contamination which are deleterious to the application in question. This has delivered potential opportunities for aerospace, automotive and electronic component manufacturers.

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