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FP6

CDX NANOWIRES Résumé de rapport

Project ID: 511020
Financé au titre de: FP6-MOBILITY
Pays: Romania

Final Activity Report Summary - CDX NANOWIRES (Preparation and study of cadmium chalcogenites nanowires)

The increasing interest in nanotechnology in the last few years is given by the extraordinary wide field of possible applications starting from electronics and communications, including computer technologies and ending to life sciences and biotechnology. Nanostructurated semiconductors show properties different from the bulk ones, properties induced by their size and their large surface to bulk ratio. The exploitation of these size induced properties opens up new fields for applications and promises a revolution in the fields of electronics, optoelectronics and spintronics.

The scientific aim of the project was given by the preparation of Cd chalcogenites nanowires and their study with respect to possible applications. Besides the scientific aim the project presented a career development goal, ensuring the reintegration of the researcher in the host institution after completing a postdoctoral stage in an European Union (EU)-funded research and training network. Both goals were achieved.

In terms of scientific results the following steps were followed:
- The set-up of a laboratory dedicated to the preparation of nanowires by the template method. In addition the method implementation was enabled by a scientific collaboration agreement between the host institute (Institutul National De Cercetare Dezvoltare Pentru Fizica Materialelor) and GSI Darmstadt (a former host of the trainee during his initial stage); this allows the membrane preparation by swift heavy ion irradiation.
- The preparation of CdTe nanowires by electrochemical deposition; the preparation of CdS pure and doped nanowires and nanostructures by electrochemical and chemical deposition; the preparation of metal CdTe metal nanowires by electrochemical deposition.
- Studies by optical spectroscopy of pure and doped CdS nanowires.
- Preparation of these II-VI semiconductor nanowires opens up the possibility of preparing semiconductor optoelectronic devices such as photoconductors and photodiodes with specific properties, tailored as a function of necessities. Moreover the method used enables a transition from CMOS silicon based devices to a novel approach in the fabrication of semiconductor devices. It is clear that such alternative methods are only at the beginning and further research is needed in the field but the first results are extremely promising.

In terms of reintegration of the researcher, the following goals were achieved:
- The researcher has a permanent position (senior researcher) in the host institution, enabling him to pursue his career goals.
- A multidisciplinary team developed around the subject of nanowire preparation brought to the attention of other researchers of the host institution by the fellow.
- Several proposals for projects were already submitted for financing some of them being selected for financing (the fellow obtained as a project director a research contract from the National Research Programme with the theme: electric and photovoltaic properties of metal-CdTe-metal nanowires). More projects are under evaluation.

Contact

Ionut-Marius ENCULESCU
Tél.: +40-21-4930195
Fax: +40-21-4930267
E-mail