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SENFED Sintesi della relazione

Project ID: 42721
Finanziato nell'ambito di: FP6-MOBILITY

Final Activity Report Summary - SENFED (Semiconductor Nanowires and Their Field Effect Devices)

SENFED has involved research in the area of semiconductor nanowires and the realisation of field effect devices for sensing applications. In the following, we present the list of declared challenges and how we have solved them:
(i) Mastering of final structural properties.
Synthesis of novel crystalline structures: Due to the small size of nanowires and the large surface-to-volume ratio, nanowires can be found in crystalline phases different from their bulk counterparts. The ability to produce new crystalline phases in a controlled way opens new perspectives for bandgap engineering and thereby the creation of novel nanowire devices.

In this project we have demonstrated the synthesis of nanowires with zinc-blende (cubic) and wurtzite (hexagonal) crystal structure. We have shown this for silicon and gallium arsenide nanowires. We have studied this first from the structural point of view by transmission electron microscopy and from the functional point of view by photoluminescence spectroscopy. With this we have been able to show for the first time the advantages of combining the two crystalline structures.

(ii) Synthesis of nanowires catalyst-free or with alternative metal catalysts: One of most common method for synthesis of nanowires a metal catalyst seed is required. In many studies gold (Au) is the chosen metal, resulting into trace concentrations of the metal within the wires. As gold is a known deep-level impurity in semiconductors, its presence significantly reduces the quality of electrical and optical characteristics. We have developed new methods for the synthesis of Si, GaAs and Ge nanowires with alternative catalysts such as Cu, Ga, In and Bi. In this way we have sown how the resulting properties of the nanowires can be much further improved.

(iii) CMOS compatible realisation of nanowire devices for electronic and sensing applications: We have fabricated novel kinds of sensors by fabricating anodised alumina layers directly on a silicon chip. We have also used the structures as water compatible sensors. Additionally, we have studied the integration of various types of nanowire arrays for the use as a sensor.


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