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FP7

IFOX — Result In Brief

Project ID: 246102
Funded under: FP7-NMP
Country: Netherlands

Novel materials enable More than Moore technologies

Advanced complementary metal-oxide semiconductors (CMOSs) can help the European semiconductor industry reach beyond the confines of Moore's law and develop electronic devices utilising non-digital information. EU-funded scientists exploited the phenomenal properties of metal oxides to develop multifunctional electronic devices that far exceed the performance of current silicon-based devices.
Novel materials enable More than Moore technologies
Moore's law works well for chips in the digital world, but not for interfacing with the actual physical world that is analogue. Adding functionalities that do not necessarily scale according to this law in electronic devices is the new trend in the semiconductor industry, known as More than Moore (MtM). This paradigm seeks to develop advanced CMOSs that should be the next wave in electronics.

Oxides are one of the most amazing classes of materials, exhibiting a variety of phenomena including ferroelectricity and ferromagnetism. The EU-funded project IFOX (Interfacing oxides) exploited the electric and magnetic properties of a number of transition metal oxides that arise from the rich interplay of charge, spin and orbital degrees of freedom in such materials and their interfaces to integrate analogue functions into CMOS-based devices. Engineering of such complex systems provided scaling that extends substantially beyond CMOS.

Scientists designed various material interfaces that added to or improved the functioning of CMOS devices. IFOX placed focus on optimising ferroelectric and ferromagnetic oxide layers to grow high-quality oxide films. The effective coupling between ferroelectric and ferromagnetic phases in these materials allowed researchers to extend functionalities and performance limits.

The resistive switching phenomenon found in heterostructures based on manganese oxide/titanium oxide (MnO/TiO) proved suitable for data storage. The inherent tunnel magnetoresistance found on heterostructures based on barium titanate (BaTiO3) and NiFeO3 can form the basis for magnetoresistive random access memory, a new type of non-volatile memory.

Manipulation of magnetisation by an electric field using a bilayer of (La,Sr)MnO3 and bismuth ferrite (BiFeO3) represents an important development for realising magnetic memories with low switching power. Other oxide heterostructures combining magnetoresistance and gas sensing properties have important implications for automotive applications.

Some of the heterostructures delivering MtM value were fabricated on large-area silicon wafers and demonstrated to the industry.

Project findings are an important step towards MtM and beyond-CMOS electronics, fostering the emergence of new technologies based on oxide materials.

Related information

Keywords

More than Moore, metal-oxide, CMOS, electronic devices, IFOX, heterostructures, magnetoresistance
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