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AlGaN and InAlN based microwave components
Start date:2010-11-01
End date:2013-10-31
Project Acronym:AL-IN-WON
Project status:Execution
Coordinator
| Organization name:UNITED MONOLITHIC SEMICONDUCTORS SAS | |
| Administrative contact | Address |
|
Name:Didier |
ROUTE DEPARTEMENTALE 128 ORSAY FRANCE Region:ÎLE DE FRANCE Ile de France Essonne |
| Tel:+33-169330620 | |
| Fax:+33-169330552 | |
| E-mail:Contact | |
| URL:http://www.ums-gaas.com | Organization Type: |
Description
Objective:
This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected. AL-IN-WON will explore two main disrupting routes: - Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability. - High efficiency / High Power generation in Ku / Ka bands It proposes to evaluate in 2 phases next generation of WBG material up to Ka Band.
The InAlN/GaN hetero-structure offers the following advantages: As InAlN/GaN is lattice matched, it offer the possibility to growth very thin layer in the range of 10nm or below WHICH IS THE MOST RELEVANT to overcome short channel effect AND GO TOWARDS HIGH frequency range up to millimetre wave range. In0.18 Al0.82N /GaN is a new hetero-structure able to give twice the drain current available from a more conventional AlGaN/GaN hetero-structure. Breakdown voltage is comparable for the two hetero-structures. In0.18 Al0.82N is latticed matched to GaN and higher reliability is therefore expected compared to AlGaN/GaN. Passivation is currently a major limitation to device operation. InAlN/GaN MOSHEMT are very promising with strong current drain improvement compared to HEMT (UltraGaN). We plan to evaluate CW Ku and Ka Band MMIC High Power Amplifiers (HPA) and Low Noise Amplifiers (LNA). Demonstrators in Ka band will be designed based on devices coming from the run 2.
The final objective being the evaluation of InAlN/GaN compared to more conventional AlGaN/GaN very high power HEMT technology with very high breakdown voltage, high current and compliant with high power density. Regarding space application for which reliability and robustness are of major concerns, we expect to demonstrate the major breakthrough offered by GaN technology, and especially InAlN if successful.
Achievements:
General information:
Project Details
Start date:2010-11-01
End date:2013-10-31
Duration:36 months
Project Reference:242394
Project cost:3368361 EURO
Project Funding:1953471 EURO
Programme Acronym:
FP7-SPACE
Programme type:Seventh Framework Programme
Subprogramme Area:Space technologies
Contract type:Collaborative project (generic)
URL:http://www.alinwon-fp7.eu/fp7/
Subject index:Other Technology, Space & satellite research
Results for this Project
| Periodic Report Summary - AL-IN-WON (AlGaN and InAlN based microwave components) | 23/07/2012 |
| Periodic Report Summary - AL-IN-WON (AlGaN and InAlN based microwave components) | 12/10/2012 |
Other participants
| Organization name:UNITED MONOLITHICS SEMICONDUCTORS GMBH | |
| Administrative contact | Address |
|
Name:Klaus |
WILHELM-RUNGE-STRASSE 11 ULM DEUTSCHLAND Region:BADEN-WÜRTTEMBERG TÜBINGEN Ulm, Stadtkreis |
| Tel:+49-7315053080 | |
| Fax:+49-7315053005 | |
| E-mail:Contact | |
| URL:http://www.ums-gaas.com | Organization Type: |
| Organization name:UNIVERSITA DEGLI STUDI DI PADOVA | |
| Administrative contact | Address |
|
Name:Maria |
Via VIII Febbraio 2 PADOVA ITALIA Region:NORD EST VENETO Padova |
| Tel:+39-0498277580 | |
| Fax:+39-0498277771 | |
| E-mail:Contact | |
| URL:http://www.unipd.it | Organization Type:Education |
| Organization name:ALCATEL THALES III V LAB | |
| Administrative contact | Address |
|
Name:Denis |
ROUTE DE NOZAY MARCOUSSIS FRANCE Region:ÎLE DE FRANCE Ile de France Essonne |
| Tel:+33-130776893 | |
| Fax:+33-130776786 | |
| E-mail:Contact | |
| URL:http://www.3-5lab.fr | Organization Type: |
| Organization name:THALES ALENIA SPACE FRANCE | |
| Administrative contact | Address |
|
Name:Christiane |
Avenue Jean-François Champollion 26 TOULOUSE FRANCE Region:SUD-OUEST MIDI-PYRÉNÉES Haute-Garonne |
| Tel:+33-534355033 | |
| Fax:+33-534355603 | |
| E-mail:Contact | |
| URL:http://www.thalesaleniaspace.com | Organization Type:Industry |
| Organization name:MEC - MICROWAVE ELECTRONICS FOR COMMUNICATIONS SRL | |
| Administrative contact | Address |
|
Name:Vito Antonio |
VIA SAN NICOLO' DI VILLOLA 1 BOLOGNA ITALIA Region:EMILIA-ROMAGNA Bologna |
| Tel:+39-0516333403 | |
| Fax:+39-0516333403 | |
| E-mail:Contact | |
| URL:http://www.mec-mmic.com | Organization Type: |
| Organization name:UNIVERSITE DE LIMOGES | |
| Administrative contact | Address |
|
Name:Michel |
François Mitterrand 33 23204 LIMOGES FRANCE Region:SUD-OUEST LIMOUSIN Haute-Vienne |
| Tel:+33-555149151 | |
| Fax:+33-555149188 | |
| E-mail:Contact | |
| URL:http://www.unilim.fr | Organization Type: |
Record control number:96633
