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Development of low dislocation density gallium nitride substrates

Start date:2002-05-01

End date:2005-12-31

Project Acronym:DENIS

Project status:Completed

Coordinator

Organization name:ACREO AB
Administrative contact Address
Name:Hans HENTZELL (Dr) SIC ELECTRONICS
Isafjordsgatan 22
164 40
KISTA
SVERIGE

Region:SVERIGE STOCKHOLM
Tel:+46-8-6327750
Fax:+46-8-6327710
E-mail:Contact
URL: Organization Type:Other

Description


Objective: The project will develop a growth technique suitable for the production of GaN wafers. To achieve production grade material the defect concentration and in particular dislocation density must be reduced by more than 3 orders of magnitude compared with the standard material of today. Commercial production implies a well-controlled, reproducible and scaleable technique, demands that are met by the use of Hydride Chemical Vapour Deposition (HCVD). Material quality will be evaluated using a number of device demonstrators, a UV LED, a high power HEMT and a violet laser diode. These devices will not be developed as part of the program, but structures based on existing technology at the respective partner organisations will be manufactured. In terms of device goals the project aims to demonstrate dramatically improved performance that will motivate a rapid uptake of Nitride technology in Europe.

Achievements:

General information:

Project Details


Start date:2002-05-01

End date:2005-12-31

Duration:44 months

Project Reference:G5RD-CT-2001-00566

Project cost:2041604 EURO

Project Funding:1549816 EURO

Programme Acronym: FP5-GROWTH

Programme type:Fifth Framework Programme

Subprogramme Area:RTD Activities of a Generic Nature : materials and their technologies for production and transformation and new and improved materials and production technologies in the steel field

Contract type:Cost-sharing contracts

URL:

Subject index:Industrial Manufacture, Materials Technology
 

Results for this Project

A reactor for GaN thick wafer and boule growth  13/10/2006 
Growth of GaN/AlGaN wafers for high electron mobility transistor (HEMT) by metaloorganic vapor phase epitaxy (MOVPE)  13/10/2006 
High pressure annealing method for modification of structural, optical and electrical properties of Group-II nitride semiconductor structures.  13/10/2006 

Other participants

Organization name:INSTYTUT WYSOKICH CISNIEN - POLSKA AKADEMIA NAUK
Administrative contact Address
Name:Sylwester POROWSKI (Professor) Po Box 52
28-37,Sokolowska 29-37
01 142
WARSZAWA
POLSKA

Region:MAZOWIECKIE M. Warszawa
Tel:+48-22-6325010
Fax:+48-22-6324218
E-mail:Contact
URL: Organization Type:Research,Other
 
Organization name:LINKOEPING UNIVERSITY
Administrative contact Address
Name:Curt CARLSSON (Mr) DEPARTMENT OF PHYSICS AND MEASUREMENT TECHNOLOGY
MATERIALS SCIENCE DIVISION
Fysikhuset, Infart, 4, Valla
58183
LINKÖPING
SVERIGE

Region:SVERIGE ÖSTRA MELLANSVERIGE Östergötlands län
Tel:+46-13-281000
Fax:+46-13-282825
E-mail:
URL: Organization Type:Education
 
Organization name:OSRAM-OPTO SEMICONDUCTORS GMBH
Administrative contact Address
Name:Rüdiger MULLER (Dr) SEMICONDUCTOR ENGINEERING
PF 100944
Wernerwerkstrasse 2
93009
REGENSBURG
DEUTSCHLAND

Region:BAYERN OBERPFALZ Regensburg, Kreisfreie Stadt
Tel:+49-941-2022520
Fax:+49-941-2022851
E-mail:
URL: Organization Type:Other
 
Organization name:UNIVERSITAET BREMEN
Administrative contact Address
Name:Gerd-Rüdiger KUCK (Mr) DEPARTMENT 1 : PHYSICS / ELECTRICAL ENGINEERING
SEMICONDUCTOR EPITAXY
Kufsteiner Strasse
28334
BREMEN
DEUTSCHLAND

Region:BREMEN Bremen Bremen, Kreisfreie Stadt
Tel:+49-421-2182712
Fax:+49-421-2184259
E-mail:
URL: Organization Type:Research
 

Record control number:61404




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