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Zawartość zarchiwizowana w dniu 2024-06-18

Perfectly interfaced nanomaterials for next generation oxide electronics

Cel

Oxide thin film heterostructures hold the key to a wide range of novel, and energy efficient devices of many different sorts. In the last few years, there has been a plethora of very exciting reports in the top journals on the basic science of single layer oxide films or heterostructure devices. However, the holy grail of applications is still just an event on the horizon. An innovative and emerging materials science led approach is now required to understand the factors at play limiting these highly promising materials, thus opening the door to realising their functional potential. As time progresses the interfaces are playing an ever stronger role in the functionality and multifunctionality. New kinds of interfaces, new ways to control them, and state-of-the art probing of them are all needed to understand how to control and tune them. This proposal strikes at the heart of all these issues and aims to realise the true power of oxide electronics.

Zaproszenie do składania wniosków

ERC-2009-AdG
Zobacz inne projekty w ramach tego zaproszenia

System finansowania

ERC-AG - ERC Advanced Grant

Instytucja przyjmująca

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Wkład UE
€ 1 565 873,00
Adres
TRINITY LANE THE OLD SCHOOLS
CB2 1TN Cambridge
Zjednoczone Królestwo

Zobacz na mapie

Region
East of England East Anglia Cambridgeshire CC
Rodzaj działalności
Higher or Secondary Education Establishments
Kontakt administracyjny
Renata Schaeffer (Mr.)
Kierownik naukowy
Judith Louise Driscoll (Prof.)
Linki
Koszt całkowity
Brak danych

Beneficjenci (1)