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High-pressure phase transitions inpolyamorphic systems of semiconducting elements


The project is aimed to acquisition the experimental information about the transformations occurred in amorphous silicon and germanium within wide pressure and temperature intervals, characterization of the different amorphous phases formed under high pres sure.

This will be done by in situ high-pressure experiments using Raman, infrared spectroscopy and X-ray diffraction. The incoming phase period is based in the University College of London (UCL) using the range of diamond anvils cells installed there for optical measurements. The structural experiments are planned on the X-ray synchrotron sources in SRS (Daresbury, UK) and ESRF (Grenoble, France).

The return phase in the Institute of Solid State Physics (Russian Academy of Sciences), is planned to obtain bulk samples of the quenched high-pressure amorphous Si and Ge samples by means of 'quenching under pressure' method employing large-volume high pressure cells and for measuring the pressure dependence of the superconducting transition temperature of Si and Ge samples up to 60 GPa.

The project is a stage of the general research program planned UCL and is directed to complex investigations of the 'polyamorphism' phenomenon in the systems demonstrated the first-order phase transitions within liquid (amorphous) state. The experience, experimental skills and technical approaches obtained during the accomplishment of the project will be used for studding ionic-covalent framework liquids such as SiO2 and GeO2 important from the geological point of view.

The project can be accomplished completely in the experimental centres of Europe serving for promotion of the intra-European scientific relations. The engaging of the Russian scientists for realization of the research projects in Europe will also work for these very objectives as far as Russia still possesses a high knowledge-based potential.

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